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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF647 UHF power LDMOS transistor
Product specification Supersedes data of 2001 Aug 02 2001 Nov 27
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (HF to 800 MHz) * Internal input damping for excellent stability over the whole frequency range. APPLICATIONS * Communication transmitter applications in the HF to 800 MHz frequency range.
3 4
MBK777
BLF647
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION
1
2
5
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 VDS (V) 28 28 PL (W) 120 120 (PEP)
Top view
Fig.1 Simplified outline.
Gp (dB) >14.5 >14.5
D (%) >55 >40
dim (dBc) - -26
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Tmb 25 C CONDITIONS - - - - -65 - MIN. MAX. 65 15 18 290 +150 200 V V A W C C UNIT
2001 Nov 27
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 290 W
BLF647
VALUE 0.6 0.2
UNIT K/W K/W
CHARACTERISTICS Tj = 25 C per section unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values of the die only. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 20 V; ID = 140 mA VGS = 0; VDS = 28 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 20 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 28 V; f = 1 MHz; note 1 VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 4 - 18 - - - - - - TYP. - - - - - 4 160 80 43 6 MAX. - 5.5 1.2 - 25 - - - - - UNIT V V A A nA S m pF pF pF
MGW546
handbook, halfpage
100
Coss (pF) 80
60
40
20
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.2
Output capacitance as a function of drain-source voltage; typical values per section.
2001 Nov 27
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.2 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB 2-tone, class-AB CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 800 f1 = 800; f2 = 800.1 VDS (V) 28 28 32 32 PL (W) 120 120 (PEP) 150 150 (PEP) Gp (dB) >14.5 >14.5 typ. 12.5 typ. 13 D (%) >55 >40 typ. 60 typ. 45 dim (dBc) - -26 - typ. -30
Ruggedness in class-AB operation The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power. The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions. Impedances (per section) At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 and ZL = 2.7 + j0.7 . At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 and ZL = 1.8 + j0.7 .
2001 Nov 27
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
Application at 600 MHz
MGW540
BLF647
MGW541
handbook, halfpage
20
80 Gp
handbook, halfpage
0
Gp (dB) 15
D (%)
60
dim (dBc) -20 d3
D
10 40
-40
d5
5
20
-60
0 0 50 100 150 PL (PEP) (W)
0 200
-80
0
50
100
150 PL (PEP) (W)
200
Th = 25 C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (-6 dB); f2 = 600.1 MHz (-6 dB) measured in 600 MHz test circuit.
Th = 25 C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (-6 dB); f2 = 600.1 MHz (-6 dB) measured in 600 MHz test circuit.
Fig.3
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.4
Intermodulation distortion as a function of peak envelope output power; typical values.
MGW542
handbook, halfpage
20
80 Gp
Gp (dB) 15
D (%)
60
D
10 40
5
20
0 0 50 100 150 PL (W)
0 200
Th = 25 C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz; measured in 600 MHz test circuit.
Fig.5
Power gain and drain efficiency as functions of load power; typical values.
2001 Nov 27
5
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3 C7 R2 L5 L15 L3 L7 L9 50 input B1 L2 C2 L10 TR1 L4 L16 + Vbias R1 C9 R3 C8 L6 L8 L12 C16
MGW539
Philips Semiconductors
handbook, full pagewidth
UHF power LDMOS transistor
+ VD C20
L14 8 C18 L11 C15 C19
R4
C1 L1 C3 C5 C6 C11 C10 C13 B2 C12 C14
50 C17 output
6
Dimensions in mm.
L13
Product specification
BLF647
Fig.6 Class-AB common source 600 MHz test circuit.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components class-AB 600 MHz test circuit (see Figs 6 and 7) COMPONENT C1, C2 C3 C5 C6 C7, C8 C9 C10 C11, C12 C13 C14 C15, C16, C17 C18 C19 C20 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13 L14 L15, L16 B1 B2 R1 R2, R3 R4 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 Tekelec trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 SMD capacitor electrolytic capacitor electrolytic capacitor semi rigid coax UT70-25 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 ferrite Coilcraft SMD coil 1008CS-102XKBC semi rigid coax (lambda/2) semi rigid coax balun UT70-25 resistor resistor resistor 1 H Z = 50 1.5 lambda/2 Z = 25 1.5 48.5 mm 1 k 100 3,3 VALUE 30 pF 8.2 pF 16 pF 0.6 to 7.5 pF 100 pF 10 F 2 pF 10 pF 8.2 pF 1.5 pF 100 pF 1 F 470 F 100 F Z = 25 1.5 30.6 mm 15 x 10 mm 5.5 x 15 mm 10 x 10 mm 15 x 5 mm 48.5 x 2.4 mm 10 x 2.4 mm DIMENSIONS
BLF647
CATALOGUE No.
2222 595 16754
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm.
2001 Nov 27
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
handbook, full pagewidth
95
95
80
+Vbias R1 C9 C7 C1 C2 B1 L1 L2 C8 R3 R2 L15 B2
+VD
C20
L14
R4
C18
BLF647
C3 C5 C6 3 L16
C11 C13 C10 C12 C14 C15 C16 C17
8
C19
MGW547
Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit.
2001 Nov 27
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
Application at 800 MHz
MGW543
BLF647
MGW544
handbook, halfpage
20
80
handbook, halfpage
0
Gp (dB) 15 Gp
D (%)
60
dim (dBc) -20 d3
d5 10
D
40
-40
5
20
-60
0 0 100
0 200 300 PL (PEP) (W)
-80
0
100
200 300 PL (PEP) (W)
Th = 25 C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 800 MHz (-6 dB); f2 = 800.1 MHz (-6 dB) measured in 800 MHz test circuit.
Th = 25 C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 800 MHz (-6 dB); f2 = 800.1 MHz (-6 dB) measured in 800 MHz test circuit.
Fig.8
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.9
Intermodulation distortion as a function of peak envelope output power; typical values.
MGW545
handbook, halfpage
20
80
Gp (dB) 15 Gp
D (%)
60
10
40
D
5
20
0 0 50 100 150 PL (W)
0 200
Th = 25 C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz; measured in 800 MHz test circuit.
Fig.10 Power gain and drain efficiency as functions of load power; typical values.
2001 Nov 27
9
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ok, full pagewidth
2001 Nov 27
3 C7 R2 L15 L3 50 input B1 L2 C2 C1 L1 C5 C6
Philips Semiconductors
UHF power LDMOS transistor
+ VD C20
3 L5 L7 L9 L11 C15 C19 C10 C11 C12 C13 L12 C14 B2 L13 C16
MGW538
L14 8 C18
R4
50 C17 output
10
Dimensions in mm.
L10 TR1 L4 L16 + Vbias R1 C9 R3 C8 L6 L8
Product specification
BLF647
Fig.11 Class-AB common source 800 MHz test circuit.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components class-AB 800 MHz test circuit (see Figs 11 and 12) COMPONENT C1, C2 C5 C6 C7, C8 C9 C10, C11 C12, C13 C14 C15, C16 C17 C18 C19 C20 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13 L14 L15, L16 B1 B2 R1 R2, R3 R4 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 tekelec trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 SMD capacitor electrolytic capacitor electrolytic capacitor semi rigid coax UT70-25 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 ferrite Coilcraft SMD coil 1008CS-102XKBC semi rigid coax (lambda/2) semi rigid coax balun UT70-25 resistor resistor resistor 1 H Z = 50 1.5 lambda/2 Z = 25 1.5 48.5 mm 1 k 100 3,3 VALUE 30 pF 10 pF 0.6 to 7.5 pF 100 pF 10 F 8.2 pF 10 pF 4.7 pF 100 pF 20 pF 1 F 470 F 100 F Z = 25 1.5 30.6 mm 15 x 10 mm 5.5 x 15 mm 10 x 10 mm 15 x 5 mm 48.5 x 2.4 mm 10 x 2.4 mm DIMENSIONS
BLF647
CATALOGUE No.
2222 595 16754
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm.
2001 Nov 27
11
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
handbook, full pagewidth
95
95
80
+Vbias R1 C9 C7 C1 C2 B1 L1 L2 C8 R3 R2 L15 B2
+VD
C20
L14
R4
C18
BLF647
C5 C6 3 L16
C11
C13 C14 C15 C16 C17
C10 C12 3 8
C19
MGW548
Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.
2001 Nov 27
12
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
BLF647
SOT540A
D
A F D1
U1 q H1 C w2 M C M
B
c
1
2
H
U2
p
E1 w1 M A M B M
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 b 8.51 8.26 c 0.15 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.38 3.12 Q 2.72 2.46 q 27.94 U1 34.16 33.91 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25
22.05 22.05 10.26 10.31 10.21 21.64 21.64 10.06 10.01
15.75 18.72 14.73 18.47
0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380
OUTLINE VERSION SOT540A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-08-27 99-12-28
2001 Nov 27
13
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BLF647
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 27
14
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF647
2001 Nov 27
15
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp16
Date of release: 2001
Nov 27
Document order number:
9397 750 08838

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